AME P5000 Chamber C

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Facts

The AME P5000 is a multi-chamber tool set up for a variety of processes

• Chamber C - RIE of Silicon Dioxide

  • CHF3, CF4, and O2 are used to  reactively ion etch silicon dioxide.

• Other Chambers

  • AME P5000 Chamber A - PECVD of TEOS Silicon Dioxide

Personnel

• Tool Engineer - John Nash

• Process Engineer - Sean O'Brien

• Super User - Patricia Meller

• Any of these personnel can certify new users

Manuals

• P5000 Manual

• P5000 Certification Checklist

Process Information

• Chamber C can only etch silicon wafers with clean backs.

• All oxide and nitride must be removed from the backs to prevent system arcing.

• Glass wafers are not allowed due to arcing.

P5000 Oxide Etch