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AME P5000 Chamber A
Facts
The AME P5000 is a multi-chamber tool set up for a variety of processes
Chamber A - PECVD of TEOS Silicon Dioxide
TEOS is heated and brought into the chamber where it is subjected to an RF plasma and a heated chamber at 300 to 390C
No gold or copper coatings allowed.
Other Chambers
Personnel
Tool Engineer - John Nash
Process Engineer - Sean O'Brien
Super User - Patricia Meller
Super User - Eli Powell
Super User - William Huang
Any of these personnel can certify new users
Manuals
Process Information
Plasma cleans are run before and after depositions to prevent the buildup from peeling off of the chamber.
A Plasma Clean must be run after every one micron of TEOS Deposition.
For multiple micron depositions, the wafer must removed after each micron of deposition so that the chamber can be cleaned.
Parameter | Setting |
|---|---|
Pressure | 9 Torr |
Power | 250W |
Temp | 390C |
Spacing | 220 mils |
O2 | 285 sccm |
TEOS Flow | 400 sccm |
Deposition Rate | 85 A/sec |
Uniformity | 1.1% |