AME P5000 Chamber A

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AME P5000 Chamber A


Facts

The AME P5000 is a multi-chamber tool set up for a variety of processes

  • Chamber A - PECVD of TEOS Silicon Dioxide

  • TEOS is heated and brought into the chamber where it is subjected to an RF plasma and a heated chamber at 300 to 390C

  • No gold or copper coatings allowed.

Personnel

  • Any of these personnel can certify new users

Manuals

Process Information

  • Plasma cleans are run before and after depositions to prevent the buildup from peeling off of the chamber.

  • A Plasma Clean must be run after every one micron of TEOS Deposition. 

    • For multiple micron depositions, the wafer must removed after each micron of deposition so that the chamber can be cleaned.

 

Parameter

Setting

Parameter

Setting

Pressure

9 Torr

Power

250W

Temp

390C

Spacing

220 mils

O2

285 sccm

TEOS Flow

400 sccm

Deposition Rate

85 A/sec

Uniformity

1.1%