The Ultratech S200 G2 Savannah ALD system is a single chamber atomic layer deposition system.

It has six precursor channels number 0-5 and has
- Deionized H2O,
- HfO2 - Tetrakis Dimethyl Hafnium
- Al2O3 - Trimethyl Aluminum
- TiO2 - Tetrakis Dimethyl Titanium
- ZrO2 - Tetrakis Dimethyl Zirconium
- ZiO - Diethyl Zinc (chamber needs an overcoat of HfO2 after zinc depostions)
Precursors can change with the needs of users but must be scheduled with the SMFL to make any changes.

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