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- Tool Engineer - John Nash
- Process Engineer - Sean O'Brien
- Super User - Patricia Meller
- Super User - Eli Powell
- Super User - William Huang
- Any of these personnel can certify new users
Manuals
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- P5000 Manual - Rev H A - 411/67/1718
Process Information
Plasma cleans are run before and after depositions to prevent the buildup from peeling off of the chamber.
- A Plasma Clean must be run after every one micron of TEOS Deposition.
- For multiple micron depositions, the wafer must removed after each micron of deposition so that the chamber can be cleaned.
| Parameter | Setting |
|---|---|
| Pressure | 9 Torr |
| Power | 250W |
| Temp | 390C |
| Spacing | 220 mils |
| O2 | 285 sccm |
| TEOS Flow | 400 sccm |
| Deposition Rate | 85 A/sec |
| Uniformity | 1.1% |