AME P5000 Chamber A
Facts
The AME P5000 is a multi-chamber tool set up for a variety of processes
- Chamber A - PECVD of TEOS Silicon Dioxide
- TEOS is heated and brought into the chamber where it is subjected to an RF plasma and a heated chamber at 300 to 390C
- No gold or copper coatings allowed.
- Other Chambers
Personnel
- Tool Engineer - John Nash
- Process Engineer - Sean O'Brien
- Super User -Â Patricia Meller
- Super User -Â Eli Powell
- Super User -Â William Huang
- Any of these personnel can certify new users
Manuals
Process Information
Plasma cleans are run before and after depositions to prevent the buildup from peeling off of the chamber.
- A Plasma Clean must be run after every one micron of TEOS Deposition.Â
- For multiple micron depositions, the wafer must removed after each micron of deposition so that the chamber can be cleaned.
Parameter | Setting |
---|---|
Pressure | 9 Torr |
Power | 250W |
Temp | 390C |
Spacing | 220 mils |
O2 | 285 sccm |
TEOS Flow | 400 sccm |
Deposition Rate | 85 A/sec |
Uniformity | 1.1% |