Facts
The Ultratech S200 G2 Savannah ALD system is a single chamber atomic layer deposition system.
- It has six precursor channels number 0-5 and has
- Deionized H2O,
- HfO2 - Tetrakis Dimethyl Hafnium
- Al2O3 - Trimethyl Aluminum
- TiO2 - Tetrakis Dimethyl Titanium
- ZrO2 - Tetrakis Dimethyl Zirconium
- ZiO - Diethyl Zinc (chamber needs an overcoat of HfO2 after zinc depostions)
- Precursors can change with the needs of users but must be scheduled with the SMFL to make any changes.
Personnel
- Equipment Engineer - Bruce Tolleson
- Process Engineer - Sean O'Brien
- Super User - Patricia Meller
- Super User - Karl Hirschman
- Super User - Eli Powell
- Super User - William Huang
- Any of these personnel can certify new users
Tool & Process Information
- ALD Deposition Information
Manuals
- ALD Manual - Rev D - 3/12/20
- ALD Certification Checklist