Ultratech ALD
Facts
The Ultratech S200 G2 Savannah ALD system is a single chamber atomic layer deposition system.Â
- It has six precursor channels number 0-5 and hasÂ
- Deionized H2O,Â
- HfO2 - Tetrakis Dimethyl Hafnium
- Al2O3 - Trimethyl Aluminum
- TiO2 -Â Tetrakis Dimethyl Titanium
- ZrO2 -Â Tetrakis Dimethyl Zirconium
- ZiO - Diethyl Zinc (chamber needs an overcoat of HfO2 after zinc depostions)Â
- Precursors can change with the needs of users but must be scheduled with the SMFL to make any changes.
Personnel
- Equipment Engineer
- Process Engineer - Sean O'Brien
- Super User -Â Patricia Meller
- Super User -Â Karl Hirschman
- Super User -Â Eli Powell
- Super User -Â William Huang
- Any of these personnel can certify new users
Tool & Process Information
- ALD Deposition Information
Manuals
- ALD Manual - Rev E - 2/20/23
- ALD Certification Checklist