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Ultratech ALD

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Ultratech ALD

Aug 01, 2024

Facts

The Ultratech S200 G2 Savannah ALD system is a single chamber atomic layer deposition system. 

  • It has six precursor channels number 0-5 and has 

    • Deionized H2O, 

    • HfO2 - Tetrakis Dimethyl Hafnium

    • Al2O3 - Trimethyl Aluminum

    • TiO2 - Tetrakis Dimethyl Titanium

    • ZrO2 - Tetrakis Dimethyl Zirconium

    • ZiO - Diethyl Zinc  (chamber needs an overcoat of HfO2 after zinc depostions) 

  • Precursors can change with the needs of users but must be scheduled with the SMFL to make any changes.

Personnel

  • Equipment Engineer

  • Process Engineer - Sean O'Brien

  • Super User - Patricia Meller

  • Super User - Karl Hirschman

  • Super User - Eli Powell

  • Super User - William Huang

  • Any of these personnel can certify new users

Tool & Process Information

  • ALD Deposition Information

Manuals