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- Tool Engineer - John Nash
- Process Engineer - Sean O'Brien
- Super User - Patricia Meller
- Any of these personnel can certify new users
Manuals
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- Chamber C can only etch silicon wafers with clean backs.
- All oxide and nitride must be removed from the backs to prevent system arcing.
- Glass wafers are not allowed due to arcing.
P5000 Oxide Etch
| Pressure | 250mT |
| Power | 500W |
| Magnets | 40G |
| CHF3 | 100 sccm |
| CF4 | 50 sccm |
| O2 | 10 sccm |
| Etch Rate in TEOS | 30A / sec |