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Facts

The AME P5000 is a multi-chamber tool set up for a variety of processes

  • Chamber C - RIE of Silicon Dioxide
    • CHF3, CF4, and O2 are used to  reactively ion etch silicon dioxide.

Personnel

Manuals


Process Information

  • Chamber C can only etch silicon wafers with clean backs.
  • All oxide and nitride must be removed from the backs to prevent system arcing.
  • Glass wafers are not allowed due to arcing.


P5000 Oxide Etch

Pressure250mT
Power500W
Magnets40G
CHF3100 sccm
CF450 sccm
O210 sccm
Etch Rate in TEOS30A / sec










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