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Facts

The AME P5000 is a multi-chamber tool set up for a variety of processes

  • Chamber A - PECVD of TEOS Silicon Dioxide
  • TEOS is heated and brought into the chamber where it is subjected to an RF plasma and a heated chamber at 300 to 390C
  • No gold or copper coatings allowed.

Personnel

Manuals & Users

Process Information

  • Plasma cleans are run before and after depositions to prevent the buildup from peeling off of the chamber.

  • A Plasma Clean must be run after every one micron of TEOS Deposition. 
    • For multiple micron depositions, the wafer must removed after each micron of deposition so that the chamber can be cleaned.


ParameterSetting
Pressure9 Torr
Power250W
Temp390C
Spacing220 mils
O2285 sccm
TEOS Flow400 sccm
Deposition Rate85 A/sec
Uniformity1.1%















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