Oxide Etch
- SiO2 etching may be done in a variety of chemical etchants found in the lab, as outlined below.
- Custom mixtures are labeled with the name of the owner and may contain process contaminants. Please contact owner before use.
- Tanks that are not labeled with an owner are available for general use.
- All wafers should be rinsed for 5 minutes before going into the rinser/dryer.
- Do not add water to any of the tanks. Contact a staff member to top off or change a tank.
- Always verify etch rates before use.
Etchant | Purpose |
---|---|
10:1 Buffered Oxide Etch (BOE) | General purpose oxide etching and removal |
10:1 Buffered Oxide Etch with Surfactant | Oxide etching of smaller features |
5.2:1 Buffered Oxide Etch | Oxide etching when a faster etch rate is desired |
Pad Etch | Used to etch oxide that has been deposited over aluminum. Etches aluminum at a reduced rate. |
50:1 HF | Used as part of an RCA Clean to remove trace amounts of oxide. |
Custom mix | Contact owner. |